Product Summary

The K4B1G0846G-BCH9 is organized as a 32Mbit x 4 I/Os x 8banks,16Mbit x 8 I/Os x 8banks device. The K4B1G0846G-BCH9 achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-1866) for general applications. The K4B1G0846G-BCH9 is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.

Parametrics

K4B1G0846G-BCH9 absolute maximum ratings: (1) Voltage on VDD pin relative to VSS VDD: -0.4V to 1.975V; (2) Voltage on VDDQ pin relative to VSS VDDQ: -0.4V to 1.975V;(3) Voltage on any pin relative to VSS VIN, VOUT: -0.4V to 1.975V; (4) Storage Temperature Tstg: -55 to +100°C.

Features

K4B1G0846G-BCH9 features: (1) JEDEC standard 1.5V±0.075V Power Supply; (2) VDDQ=1.5V±0.075V; (3) Programmable Additive Latency: 0, CL-2 or CL-1 clock; (4) Bi-directional Differential Data-Strobe; (5) On Die Termination using ODT pin; (5) Asynchronous Reset; (6) Package : 78 balls FBGA - x4/x8; (7) All of Lead-Free products are compliant for RoHS; (8) All of products are Halogen-free.

Diagrams

K4B1G0846G-BCH9 Circuit