(China (Mainland))
Product Summary
The K4J55323QG-BC14 is a 256Mbit GDDR3 SDRAM. The K4J55323QG-BC14 is organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 6.4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Parametrics
K4J55323QG-BC14 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -0.5 to VDDQ + 0.5V; (2)Voltage on VDD supply relative to Vss: -0.5 to 2.5 V; (3)Voltage on VDDQ supply relative to Vss: -0.5 to 2.5 V; (4)MAX Junction Temperature: +125 °C; (5)Storage temperature: -55 to +150 °C; (6)Power dissipation: TBD W; (7)Short Circuit Output Current: 50 mA..
Features
K4J55323QG-BC14 features: (1)1.8V + 0.1V power supply for device operation; (2)1.8V + 0.1V power supply for I/O interface; (3)On-Die Termination (ODT); (4)Output Driver Strength adjustment by EMRS; (5)Calibrated output drive; (6)1.8V Pseudo Open drain compatible inputs/outputs; (7)4 internal banks for concurrent operation; (8)Differential clock inputs (CK and CK); (9)Commands entered on each positive CK edge; (10)CAS latency : 4, 5, 6, 7, 8, 9, 10, 11 (clock); (11)Additive latency (AL): 0 and 1 (clock); (12)Programmable Burst length : 4 and 8; (13)Programmable Write latency : 1, 2, 3, 4, 5, 6 and 7 (clock); (14)Single ended READ strobe (RDQS) per byte; (15)Single ended WRITE strobe (WDQS) per byte; (16)RDQS edge-aligned with data for READs; (17)WDQS center-aligned with data for WRITEs; (18)Data Mask(DM) for masking WRITE data; (19)Auto & Self refresh modes; (20)Auto Precharge option; (21)32ms, auto refresh (4K cycle); (22)136 Ball FBGA; (23)Maximum clock frequency up to 800MHz; (24)Maximum data rate up to 1.6Gbps/pin; (25)DLL for outputs; (26)Boundary scan function with SEN pin; (27)Mirror function with MF pin.
Diagrams
