(China (Mainland))
Product Summary
The K4S281632C-TC75 is a 134,217,728 bits synchronous high data rate Dynamic RAM that is organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. The K4S281632C-TC75 allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S281632C-TC75 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -1.0 to 4.6 V; (2)Voltage on VDD supply relative to Vss: -1.0 to 4.6 V; (3)Storage temperature: -55 to +150 °C; (4)Power dissipation: 1 W; (5)Short circuit current: 50 mA.
Features
K4S281632C-TC75 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (2 & 3), Burst length (1, 2, 4, 8 & Full page), Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system; (6)clock; (7)Burst read single-bit write operation; (8)DQM for masking; (9)Auto & self refresh; (10)64ms refresh period (4K cycle).
Diagrams
