(China (Mainland))
Product Summary
The K4T1G084QE-HCE6 is a 1Gb E-die DDR2 SDRAM.
Parametrics
K4T1G084QE-HCE6 absolute maximum ratings: (1)VDD: -1 to 2.3V; (2)VDDQ: -0.5 to 2.3V; (3)VDDL: -0.5 to 2.3V; (4)VIN, VOUT: -0.5 to 2.3V; (5)TSTG: -55 to 100℃.
Features
K4T1G084QE-HCE6 features: (1)JEDEC standard VDD = 1.8V ± 0.1V Power Supply; (2)VDDQ = 1.8V ± 0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)Write Latency(WL) = Read Latency(RL) -1; (5)12.-Chip Driver(OCD) Impedance Adjustment; (6)Die Termination.
Diagrams
