Product Summary

The K4T51163QI-HCF7 NAND Flash uses he Single Level Cell (SLC) NAND cell technology. The K4T51163QI-HCF7 is referred to as the Small Page family. The K4T51163QI-HCF7 ranges from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The K4T51163QI-HCF7 features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active.

Parametrics

K4T51163QI-HCF7 absolute maximum ratings: (1) Temperature Under Bias TBIAS: -50°C to 125°C; (2) Storage Temperature TSTG: -65°C to 150°C; (3) Input or Output Voltage VIO, 1.8V devices: -0.6 to 2.7V, 3V device: -0.6V to 4.6V; (4) Supply Voltage VDD, 1.8V device: -0.6V to 2.7V, 3V device: -0.6V to 4.6V.

Features

K4T51163QI-HCF7 features: (1) high density NAND flash memories; (2) NAND interface; (3) supply voltage; (4) copy bac program mode; (5) fast block erase; (6) serial number option; (7) hardware data protection; (8) C file system OS native reference software.

Diagrams

K4T51163QI-HCF7