Product Summary

The NAND512W3A2DND is a monolithic integrated circuit fabricated in metal oxide semiconductor technology available in DIP and SOP packages.

Parametrics

NAND512W3A2DND absolute maximum ratings: (1)Supply voltage: -0.5 to + 22 V; (2)DC Input voltage: -0.5 to VDD + 0.5 V; (3)DC Input current: ± 10 mA; (4)Power dissipation per package: 200 mW.

Features

NAND512W3A2DND features: (1)Schmidt trigger action on each input with no external components; (2)Hysteresis voltage typically 0.9 V at VDD = 5 V and 2.3 V at VDD =10 V; (3)Noise immunity greater than 50% of VDD ( typ); (4)No limit on input rise and fall times; (5)Quiescent current specified up to 20 V; (6)Standardized symmetrical output characteristics; (7)5 V, 10 V and 15 V parametric ratings; (8)Input leakage current.

Diagrams

NAND512W3A2DND block diagram

NAND R
NAND R
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Data Sheet
Negotiable 
NAND S
NAND S
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0-1: $2.51
1-10: $2.29
10-50: $2.23
50-100: $2.00
100-250: $2.00
250-500: $1.87
500-1000: $1.79
1000-2500: $1.78