(China (Mainland))
Product Summary
The K524G2GACB-A050 is a Multi Chip Package Memory which combines 4Gbit NAND Flash Memory an 2Gbit DDR synchronous high data rate Dynamic RAM. Even the write-intensive systems can take advantage of the device’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K524G2GACB-A050 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K524G2GACB-A050 absolute maximum ratings: (1)Voltage on any pin relative to VSS: VCC: -0.6 to + 2.45V, VIN: -0.6 to + 2.45V, VI/O: -0.6 to Vcc + 0.3V (<2.45V); (2)Temperature Under Bias TBIAS: -30 to +125 °C; (3)Storage Temperature TSTG: -65 to +150 °C; (4)Short Circuit Current IOS: 5mA.
Features
K524G2GACB-A050 features: (1)Operating Temperature : -25°C ~ 85°C; (2)Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch; (3)VDD/VDDQ = 1.8V/1.8V; (4)Double-data-rate architecture; two data transfers per clock cycle; (5)Bidirectional data strobe(DQS); (6)Four banks operation; (7)Differential clock inputs(CK and CK); (8)Data I/O transactions on both edges of data strobe, DM for masking; (9)Edge aligned data output, center aligned data input; (10)No DLL; CK to DQS is not synchronized; (11)DM0 - DM3 for write masking only.
Diagrams
