(China (Mainland))
Product Summary
The MT29F64G08AKCBBH2-12：B is a micron NAND flash device. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). For further details, see Device and Array Organization. The MT29F64G08AKCBBH2-12：B additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).
Parametrics
MT29F64G08AKCBBH2-12：B absolute maximum ratings: (1)Voltage input: -0.6 to 4.6 V; (2)VCC supply voltage: -0.6 to 4.6 V; (3)VCCQ supply voltage: -0.6 to 4.6 V; (4)Storage temperature TSTG: -65 to 150 °C.
Features
MT29F64G08AKCBBH2-12：B features: (1)Open NAND Flash Interface (ONFI) 2.2-compliant; (2)Multiple-level cell (MLC) technology; (3)Synchronous I/O performance: Up to synchronous timing mode 5 and Clock rate: 10ns (DDR); (4)Read/write throughput per pin: 200 MT/s; (5)Up to asynchronous timing mode 5; (6)Up to asynchronous timing mode 5; (7)Read/write throughput per pin: 50 MT/s; (8)Read page: 75¦Ìs (MAX); (9)Program page: 1300us (TYP); (10)Erase block: 3.8ms (TYP); (11)Command set: ONFI NAND Flash Protocol; (12)First block (block address 00h) is valid when shipped from factory; (13)RESET (FFh) required as first command after poweron; (14)Operation status byte provides software method for detecting; (15)Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface; (16)Copyback operations supported within the plane from which data is read; (17)Data retention: JESD47G compliant; see qualification report; (18)Endurance: 3000 PROGRAM/ERASE cycles.
Diagrams
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 MT29F64G08AKCBBH2-12:B |
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IC FLASH NAND 64GB 100TBGA |
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