Product Summary

The MT29F64G08CBAAAWP is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728-bit banks is organized as 8,192 rows by 4,096 columns by 4 bits. Each of the x8’s 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits.

Parametrics

MT29F64G08CBAAAWP absolute maximum ratings: (1)Voltage on VDD, VDDQ Supply Relative to VSS: -1V to +4.6V; (2)Voltage on Inputs, NC or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TA (Commercial): 0°C to +70°C; (4)Storage Temperature (plastic): -55°C to +150°C; (5)Power Dissipation: 1W.

Features

MT29F64G08CBAAAWP features: (1)PC100- and PC133-compliant; (2)Fully synchronous; all signals registered on positive edge of system clock; (3)Internal pipelined operation; column address can be changed every clock cycle; (4)Internal banks for hiding row access/precharge; (5)Programmable burst lengths: 1, 2, 4, 8, or full page.

Diagrams

MT29F64G08CBAAAWP block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MT29F64G08CBAAAWP:A
MT29F64G08CBAAAWP:A

IC FLASH NAND 64GB 48TSOP
Data Sheet
0-1000: $5.36
MT29F64G08CBAAAWP:A TR
MT29F64G08CBAAAWP:A TR

IC FLASH NAND 64GB 48TSOP
Data Sheet
0-1: $8.41
1-10: $7.79
10-25: $7.68
25-50: $7.59
50-100: $6.65
100-250: $6.36
250-500: $6.32
500-1000: $5.89
MT29F64G08CBAAAWP-IT:A
MT29F64G08CBAAAWP-IT:A

IC FLASH NAND 64GB 48TSOP
Data Sheet
0-1000: $6.74