MT29F8G16ADBDAH4-IT:D

Product Summary

The MT29F8G16ADBDAH4-IT:D is a Micron NAND Flash device. The MT29F8G16ADBDAH4-IT:D creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. Also the MT29F8G16ADBDAH4-IT:D has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

Parametrics

MT29F8G16ADBDAH4-IT:D absolute maximum ratings: (1)Voltage input (1.8V): -0.6 to 2.4 V; (2)Voltage input (3.3V): -0.6 to 4.6 V; (3)Storage temperature range: -65 to 150 °C; (4)VCC supply voltage (1.8V): -0.6 to 2.4 V; (5)VCC supply voltage (3.3V): -0.6 to 4.6 V; (6)Short circuit output current, I/Os: 5 mA.

Features

MT29F8G16ADBDAH4-IT:D features: (1)Open NAND Flash Interface (ONFI) 1.0-compliant; (2)Single-level cell (SLC) technology; (3)Page size x8: 2112 bytes (2048 + 64 bytes); (4)Page size x16: 1056 words (1024 + 32 words); (5)Block size: 64 pages (128K + 4K bytes); (6)Plane size: 2 planes x 2048 blocks per plane; (7)Command set: ONFI NAND Flash Protocol; (8)Interleaved die (LUN) operations; (9)Read unique ID; (10)Block lock (1.8V only); (11)Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion; (12)WP# signal: Write protect entire device; (13)First block (block address 00h) is valid when shipped; (14)from factory with ECC. For minimum required; (15)ECC, see Error Management.; (16)Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000; (17)RESET (FFh) required as first command after power- on; (18)Alternate method of device initialization (Nand_Init) after power up (contact factory); (19)Internal data move operations supported within the plane from which data is read; (20)Data retention: 10 years; (21)Endurance: 100,000 PROGRAM/ERASE cycles.

Diagrams