Product Summary

The MT41K512M8RH-107:E a low voltage version of the DDR3 SDRAM (1.5V).

Parametrics

MT41K512M8RH-107:E absolute maximum ratings: (1)Active power-down current: 53 to 63 mA; (2)Supply voltage: 1.283 to 1.45 V; (3)I/O supply voltage: 1.283 to 1.45 V; (4)Reset current: IDD2P + 2mA; (5)Extended temperature self refresh: 25 mA; (6)Room temperature self refresh: 20 mA; (7)Burst refresh current: 242 mA.

Features

MT41K512M8RH-107:E features: (1)Differential bidirectional data strobe; (2)8n-bit prefetch architecture; (3)Differential clock inputs (CK, CK#); (4)8 internal banks; (5)Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals; (6)Programmable CAS (READ) latency (CL); (7)Programmable posted CAS additive latency (AL); (8)Programmable CAS (WRITE) latency (CWL); (9)Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]); (10)Selectable BC4 or BL8 on-the-fly (OTF); (11)Self refresh mode; (12)Self refresh temperature (SRT); (13)Automatic self refresh (ASR); (14)Write leveling; (15)Multipurpose register; (16)Output driver calibration..

Diagrams

MT41K512M8RH-107:E dimension figure