NAND02GW3B2DZA6

NAND02GW3B2DZA6, 2-Gbit NAND flash memory, BGA, -0.6 to 4.6 V, 20mA, MediaTek

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Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Box
301 ~ 600 :	2.80 / Box
601 ~ 1000 :	2.50 / Box

PartNumber:: NAND02GW3B2DZA6

Brand:: MediaTek Inc. - MediaTek | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-07

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Part Number:NAND02GW3B2DZA6
US $2.50 - 3.00
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piece

Product Summary

The NAND02GW3B2DZA6 is a 2-Gbit NAND flash memory. The device uses NAND cell technology and have a density of 2 Gbits. The NAND02GW3B2DZA6 has a memory array that is split into 2 planes of 1024 blocks each. This multiplane architecture makes it possible to program 2 pages at a time (one in each plane), or to erase 2 blocks at a time (one in each plane). This feature reduces the average program and erase times by 50%.

Parametrics

NAND02GW3B2DZA6 absolute maximum ratings: (1)TBIAS, Temperature under bias: -50 to 125℃; (2)TSTG, Storage temperature: -65 to 150℃; (3)VIO, Input or output voltage: -0.6 to 4.6 V; (4)VDD, Supply voltage: -0.6 to 4.6 V.

Features

NAND02GW3B2DZA6 features: (1)High density NAND flash memory, Up to 2 Gbits of memory array; Cost-effective solution for mass storage applications; (2)NAND interface, x8 or x16 bus width; Multiplexed address/data; (3)Supply voltage: 1.8 V or 3.0 V device; (4)Page size, x8 device: (2048 + 64 spare) bytes; x16 device: (1024 + 32 spare) words; (5)Block size, x8 device: (128 K + 4 K spare) bytes; x16 device: (64 K + 2 K spare) words; (6)Multiplane architecture, Array split into two independent planes; Program/erase operations can be performed on both planes at the same time; (7)Page read/program, Random access: 25 μs (max); Sequential access: 25 ns (min); Page program time: 200 μs (typ); Multiplane page program time (2 pages): 200 μs (typ); (8)Copy back program with automatic EDC (error detection code); (9)Cache read mode; (10)Fast block erase, Block erase time: 1.5 ms (typ); Multiblock erase time (2 blocks): 1.5 ms (typ).