NAND512W3A2D

NAND512W3A2D, NAND Flash memory, TSOP, -0.6 to 4.6 V, 20mA, STMicroelectronics

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Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Piece
301 ~ 600 :	2.80 / Piece
601 ~ 1000 :	2.50 / Piece

PartNumber:: NAND512W3A2D

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-04-10

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Part Number:NAND512W3A2D
US $2.50 - 3.00
Quantity:

piece

Product Summary

The NAND512W3A2D is a non-volatile Flash memory that uses the Single Level Cell (SLC) NAND cell technology. The NAND512W3A2D features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.

Parametrics

NAND512W3A2D absolute maximum ratings: (1)Temperature Under Bias: -50 to 125 ℃; (2)Storage Temperature: -65 to 150 ℃; (3)Input or Output Voltage: -0.6 to 2.7 V at 1.8V devices, -0.6 to 4.6 V at 3 V devices; (4)Supply Voltage: -0.6 to 2.7 V at 1.8V devices, -0.6 to 4.6 V at 3 V devices.

Features

NAND512W3A2D features: (1)high density nand flash memories; (2)nand interface; (3)supply voltage: 1.8V device: VDD = 1.7 to 1.95V, 3.0V device: VDD = 2.7 to 3.6V; (4)page read / program: Random access: 12μs (max), Sequential access: 50ns (min), Page program time: 200μs (typ); (5)copy back program mode: Fast page copy without external buffering; (6)fast block erase: Block erase time: 2ms (Typ); (7)status register; (8)electronic signatur.