Product Summary

The S29GL032A90TFIR4 is a 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL032A90TFIR4 is a 64 Mb, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A90TFIR4 is a 32 Mb, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the device has an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input.

Parametrics

S29GL032A90TFIR4 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: -0.5 V to +4.0 V; VIO: -0.5 V to +4.0 V; (4)A9, OE#, and ACC: -0.5 V to +12.5 V; (5)All other pins: -0.5 V to VCC + 0.5V; (6)Output Short Circuit Current: 200 mA.

Features

S29GL032A90TFIR4 features: (1)Single power supply operation, 3 volt read, erase, and program operations; Manufactured on 200 nm MirrorBit process technology; Secured Silicon Sector region; 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence; May be programmed and locked at the factory or by; (2)the customer; (3)Flexible sector architecture, 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors; 64Mb (boot sector models): 127 32 Kword (64 KB) sectors + 8 4Kword (8KB) boot sectors; 32Mb (uniform sector models): 64 32Kword (64KB) sectors; 32Mb (boot sector models): 63 32Kword (64KB) sectors + 8 4Kword (8KB) boot sectors.

Diagrams

S29GL032A90TFIR4block diagram