(China (Mainland))
Product Summary
The S29GL256N11TFI02 is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL256N11TFI02 is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL256N11TFI02 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: -65℃ to +150℃; (2)Ambient Temperature with Power Applied: -65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: -0.5 V to +4.0 V; VIO: -0.5 V to +4.0 V; (4)A9, OE#, and ACC: -0.5 V to +12.5 V; (5)All other pins: -0.5 V to VCC + 0.5V; (6)Output Short Circuit Current: 200 mA.
Features
S29GL256N11TFI02 features: (1)Single power supply operation, 3 volt read, erase, and program operations; (2)Enhanced VersatileI/O control, All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC; (3)Manufactured on 110 nm MirrorBit process technology; (4)Secured Silicon Sector region, 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random. Electronic Serial Number, accessible through a command sequence; May be programmed and locked at the factory or by the customer.
Diagrams
