(China (Mainland))
Product Summary
The S29GL512P10TFCR10D is a 3.0 Volt-only Page Mode Flash Memory. The S29GL512P10TFCR10D offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. And it features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes this device ideal for todays embedded applications that require higher density, better performance and lower power consumption.
Parametrics
S29GL512P10TFCR10D absolute maximum ratings: (1)Storage temperature:–65 °C to +150°C; (2)Ambient temperature with power applied:–65°C to +125°C; (3)Voltage with Respect to Ground VCC:–0.5 V to +4.0 V; (4)Voltage with Respect to Ground All Inputs and I/Os except as noted below: –0.5 V to VCC + 0.5 V; (5)Output Short Circuit Current: 200 mA.
Features
S29GL512P10TFCR10D features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)90 nm MirrorBit process technology; (3)8-word/16-byte page read buffer; (4)32-word/64-byte write buffer reduces overall programming time for multiple-word updates; (5)Secured Silicon Sector region; (6)100,000 erase cycles per sector typical; (7)20-year data retention typical; (8)Suspend and Resume commands for Program and Erase operations; (9)Write operation status bits indicate program and erase operation completion; (10)Unlock Bypass Program command to reduce programming time; (11)Support for CFI (Common Flash Interface); (12)Persistent and Password methods of Advanced Sector Protection; (13)Hardware reset input (RESET#) resets device; (14)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.
Diagrams
