SST39VF200A-70-4C-M1QE

SST39VF200A-70-4C-M1QE, 2 Mbit (x16) Multi-Purpose Flash, BGA, -0.5V to 13.2V, 50mA, 1W, Silicon Storage Technology

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Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Piece
301 ~ 600 :	2.80 / Piece
601 ~ 1000 :	2.50 / Piece

PartNumber:: SST39VF200A-70-4C-M1QE

Brand:: Silicon Storage Technology, Inc - SST | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-21

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Part Number:SST39VF200A-70-4C-M1QE
US $2.50 - 3.00
Quantity:

piece

Product Summary

The SST39VF200A-70-4C-M1QE is a 128K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF200A-70-4C-M1QE writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x16 memories.

Parametrics

SST39VF200A-70-4C-M1QE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Surface Mount Solder Reflow Temperature1: 260℃ for 10 seconds; (8)Output Short Circuit Current2: 50 mA.

Features

SST39VF200A-70-4C-M1QE features: (1)Organized as 128K x16 / 256K x16 / 512K x16, Single Voltage Read and Write Operations, 3.0-3.6V for SST39LF200A/400A/800A, 2.7-3.6V for SST39VF200A/400A/800A; (2)Superior Reliability, Endurance: 100,000 Cycles (typical); Greater than 100 years Data Retention; (3)Low Power Consumption (typical values at 14 MHz), Active Current: 9 mA (typical); Standby Current: 3μA (typical); (4)Sector-Erase Capability, Uniform 2 KWord sectors; (5)Block-Erase Capability, Uniform 32 KWord blocks; (6)Fast Read Access Time, 45 and 55 ns for SST39LF200A; 55 ns for SST39LF400A/800A; 70 ns for SST39VF200A/400A/800A.