(China (Mainland))
Product Summary
The TC58DVM92A3TAOO is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only
Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The TC58DVM92A3TAOO has a 528-byte static register
which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages).
Parametrics
TC58DVM92A3TAOO absolute maximum ratings: (1)VCC Power Supply Voltage: -0.6 to 4.6 V; (2)VIN Input Voltage: -0.6 to 4.6 V; (3)VI/O Input/Output Voltage: -0.6 V to VCC +0.3 V (≤4.6 V) V; (4)PD Power Dissipation: 0.3 W; (5)Tsolder Soldering Temperature (10s): 260℃; (6)Tstg Storage Temperature: -55 to 150℃; (7)Topr Operating Temperature: 0 to 70℃.
Features
TC58DVM92A3TAOO features: (1)Modes, Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase; (2)Mode control, Serial input/output; Command control; (3)Power supply VCC = 2.7 V to 3.6 V; (4)Program/Erase Cycles 1E5 cycle (with ECC); (5)Access time, Cell array to register 25 Ps max; Serial Read Cycle 50 ns min.
Diagrams
