Product Summary

The TC58NVG1S3ETA00 is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EPROM) organized as (2048 64) bytes/(1024 32) words 64 pages 2048 blocks. The TC58NVG1S3ETA00 has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The TC58NVG1S3ETA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.

Parametrics

TC58NVG1S3ETA00 absolute maximum ratings: (1) Power Supply Voltage VCC: -0.6 to 4.6V; (2) Input Voltage VIN: -0.6 to 4.6V; (3) Input /Output Voltage VI/O: -0.6V to VCC +0.3V (≤4.6V) ; (4) Power Dissipation PD: 0.3W; (5) Soldering Temperature (10 s) TSOLDER: 260°C; (6) Storage Temperature TSTG: -55°C to 150°C; (7) Operating Temperature TOPR: 0°C to 70°C.

Features

TC58NVG1S3ETA00 features: (1) Read, Reset, Auto Page Program, Auto Block Erase?Status Read ; (2) Number of valid blocks; (3) Program/Erase Cycles; (4) Serial input/output; (5) Power supply VCC 2.7V to 3.6V; (6) Program/Erase Cycles 100000 Cycles (With ECC).

Diagrams

TC58NVG1S3ETA00 Block Diagramt

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TC58NVG1S3ETA00
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0-1: $3.70
1-10: $3.30
10-25: $2.97
25-100: $2.71
100-250: $2.44
250-500: $2.19
500-1000: $1.85
1000-2500: $1.76
2500-5000: $1.69
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