(China (Mainland))
Product Summary
The tc58dvm92a3ta00 is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The tc58dvm92a3ta00 has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes × 512 bytes: 528 bytes × 32 pages).
Parametrics
tc58dvm92a3ta00 absolute maximum ratings: (1)VCC, Power Supply Voltage: -0.6 to 4.6 V; (2)VIN, Input Voltage: -0.6 to 4.6 V; (3)VI/O, Input/Output Voltage: -0.6 V to VCC +0.3 V (≤4.6 V) V; (4)PD, Power Dissipation: 0.3 W; (5)Tsolder, Soldering Temperature (10s): 260℃; (6)Tstg, Storage Temperature: -55 to 150℃; (7)Topr, Operating Temperature: 0 to 70℃.
Features
tc58dvm92a3ta00 features: (1)Organization, Memory cell allay 528 128K × 8; Register 528 × 8; Page size 528 bytes; Block size (16K + 512) bytes; (2)Modes, Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase; (3)Mode control, Serial input/output; Command control; (4)Power supply VCC=2.7 V to 3.6 V; (5)Program/Erase Cycles 1E5 cycle (with ECC); (6)Access time, Cell array to register 25μs max; Serial Read Cycle 50 ns min.
Diagrams
