(China (Mainland))
Product Summary
The 320W18BE is a Wireless Flash Memory device with flexible multi-partition dual operation, provides high-performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash memory’s intrinsic nonvolatility, the 320W18BE device eliminates the traditional system-performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases reliability and reduces overall system power consumption and cost.
Parametrics
320W18BE absolute maximum ratings: (1)Temperature under Bias: –40℃ to +85℃; (2)Storage Temperature: -65℃ to +125℃; (3)Voltage on Any Pin (except VCC, VCCQ, VPP): -0.5 V to +2.45 V; (4)VPP Voltage: -0.2 V to +14 V; (5)VCC and VCCQ Voltage: -0.2 V to +2.45 V; (6)Output Short Circuit Current: 100 mA.
Features
320W18BE features: (1)High Performance Read-While-Write/Erase, Burst frequency at 66 MHz; 60 ns Initial Access Read Speed; 11 ns Burst-Mode Read Speed; 20 ns Page-Mode Read Speed; 4-, 8-, 16-, and Continuous-Word Burst Mode Reads; Burst and Page Mode Reads in all; (2)Blocks, across all partition boundaries; Burst Suspend Feature; Enhanced Factory Programming at 3.1 μs/word (typ.for 0.13 μm); (3)Security, 128-bit Protection Register; 64-bits Unique Programmed by Intel; 64-bits User-Programmable; Absolute Write Protection with VPP at Ground; Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability; (4)Quality and Reliability, Temperature Range: -40℃ to +85℃; 100k Erase Cycles per Blockl; 0.13 μm ETOX. VIII Process; 0.18 μm ETOX. VII Process.
Diagrams
