Product Summary
The AO4807 is a Dual P-Channel Enhancement Mode Field Effect Transistor uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4807 is Pb-free (meets ROHS & Sony 259 specifications). The AO4807 is electrically identical.
Parametrics
AO4807 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Continuous Drain Current, TA=25℃, ID: -6 A; TA=70℃, ID: -5A; (4)Pulsed Drain Current, IDM: -30A; (5)Power Dissipation, TA=25℃, PD: 2W; TA=70℃, PD: 1.44W; (6)Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.
Features
AO4807 features: (1)VDS (V) = -30V; (2)ID = -6 A (VGS = -10V); (3)RDS(ON) < 35mΩ (VGS = -10V); (4)RDS(ON) < 58mΩ (VGS = -4.5V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4807 |
MOSFET DUAL P-CH -30V -6A 8-SOIC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4800 |
Other |
Data Sheet |
Negotiable |
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AO4800B |
MOSFET DUAL N-CH 30V 6.9A 8-SOIC |
Data Sheet |
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AO4801 |
Other |
Data Sheet |
Negotiable |
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AO4801A |
MOSFET 2P-CH 30V 5A 8SOIC |
Data Sheet |
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AO4803 |
Other |
Data Sheet |
Negotiable |
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AO4803A |
MOSFET DUAL P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
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