(China (Mainland))
Product Summary
The BS62LV4000STC-70 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70ns in 3V operation. Easy memory expansion of the BS62LV4000STC-70 is provided by an active LOW chip enable (CE), and active LOW output enable (OE) and three-state output drivers.
Parametrics
BS62LV4000STC-70 absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: -0.5 to Vcc+0.5 V; (2)TBIAS, Temperature Under Bias: -40 to +125℃; (3)TSTG, Storage Temperature: -60 to +150℃; (4)PT, Power Dissipation: 1.0 W; (5)IOUT, DC Output Current: 20 mA.
Features
BS62LV4000STC-70 features: (1)Wide Vcc operation voltage: 2.7V ~ 3.6V; (2)Very low power consumption: Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current; (3)0.5uA (Typ.) CMOS standby current; (4)High speed access time: -70 to 70ns (Max) at Vcc = 3.0V; -10 to 100ns (Max) at Vcc = 3.0V; (5)Automatic power down when chip is deselected; (6)Three state outputs and TTL compatible; (7)Fully static operation; (8)Data retention supply voltage as low as 1.5V; (9)Easy expansion with CE and OE options.
Diagrams
