Product Summary

The EC261752D-2N-1 is a Super Low Noise PHEMT. The EC261752D-2N-1 is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm PHEMT) technology. Gate width is 120μm and the 0.15μm T-shaped aluminium gate features low resistance and excellent reliability. The EC261752D-2N-1 shows a very high transconductance which leads to very high frequency and low noise performances.

Parametrics

EC261752D-2N-1 absolute maximum ratings: (1)Vds, Drain to source voltage: 3.5 V; (2)Vgs, Gate to source voltage: -2.5 V; (3)Pt, Total power dissipation: 280 mW; (4)Tch, Operating channel temperature: +175℃; (5)Tstg, Storage temperature range: -55 to +175℃.

Features

EC261752D-2N-1 features: (1)0.8dB minimum noise figure @ 18GHz; (2)1.5dB minimum noise figure @ 40GHz; (3)12dB associated gain @ 18GHz; (4)9.5dB associated gain @ 40GHz.

Diagrams

EC261752D-2N-1 block diagram