(China (Mainland))
Product Summary
The EDR2518ABSE-AEP-E 288M bits Direct Rambus DRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The EDR2518ABSE-AEP-E is 1066MHz 288Mbits Direct Rambus DRAM (RDRAM), organized as 16M words by 18 bits.
Parametrics
EDR2518ABSE-AEP-E absolute maximum ratings: (1)VI,ABS Voltage applied to any RSL or CMOS pin with respect to GND: -0.3 to VDD +0.3 V; (2)VDD,ABS ,VDDa,ABS Voltage on VDD and VDDa with respect to GND: -0.5 to VDD +1.0 V; (3)TSTORE Storage temperature: -50 to +100℃.
Features
EDR2518ABSE-AEP-E features: (1)Highest sustained bandwidth per DRAM device; (2)2.1 GB/s sustained data transfer rate; (3)Separate control and data buses for maximized efficiency; (4)Separate row and column control buses for easy scheduling and highest performance; (5)32 banks: four transactions can take place simultaneously at full bandwidth data rates; (6)Low latency features; (7)Write buffer to reduce read latency; (8)3 precharge mechanisms for controller flexibility; (9)Interleaved transactions; (10)Advanced power management:; (11)Multiple low power states allows flexibility in power consumption versus time to active state; (12)Power-down self-refresh; (13)Organization: 2K bytes pages and 32 banks, x 18; (14)Uses Rambus Signaling Level (RSL) for up to 1066MHz operation; (15)FBGA (μ BGA.) package is Sn-Pb or lead free solder (Sn-Ag-Cu).
Diagrams
