Product Summary

The FDN337N is a SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The FDN337N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Parametrics

FDN337N absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage - Continuous: ±8 V; (3)ID, Drain/Output Current - Continuous: 2.2 A; Pulsed 10; (4)PD, Maximum Power Dissipation (Note 1a): 0.5 W; (Note 1b): 0.46; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.

Features

FDN337N features: (1)Hyperfast with Soft Recovery: <40ns; (2)Operating Temperature: 175℃; (3)Reverse Voltage Up To: 600V; (4)Avalanche Energy Rated; (5)Planar Construction.

Diagrams

FDN337N block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDN337N
FDN337N
Fairchild Semiconductor
MOSFET SSOT-3 N-CH 30V
Data Sheet
0-1: $0.28
1-25: $0.22
25-100: $0.15
100-250: $0.13
FDN337N_Q
FDN337N_Q
Fairchild Semiconductor
MOSFET SSOT-3 N-CH 30V
Data Sheet
Negotiable