(China (Mainland))
Product Summary
The FJP13007H1TU is a High Voltage Fast-Switching NPN Power Transistor.
Parametrics
FJP13007H1TU absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 700 V; (2)VCEO, Collector-Emitter Voltage: 400 V; (3)VEBO, Emitter-Base Voltage: 9 V; (4)IC, Collector Current (DC): 8 A; (5)ICP, Collector Current (Pulse): 16 A; (6)IB, Base Current: 4 A; (7)PC, Collector Dissipation (TC = 25℃): 80 W; (8)TJ, Junction Temperature: 150℃; (9)TSTG, Storage Temperature: -65 ~ 150℃.
Features
FJP13007H1TU features: (1)High Voltage Capability; (2)High Switching Speed; (3)Suitable for Electronic Ballast and Switching Mode Power Supply.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FJP13007H1TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FJP13007H1TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
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FJP13007H2 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) 700V/400V/8A/NPN |
Data Sheet |
Negotiable |
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FJP13007H2TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
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FJP13007H2TU_F138 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) TO220 HI VOLT FAST SWITCH NPN PWR TRANS |
Data Sheet |
Negotiable |
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FJP13009H2TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
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FJP1943RTU |
Fairchild Semiconductor |
Transistors Switching (Resistor Biased) PNP -250V -17A 80W Silicon |
Data Sheet |
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