Product Summary

The K4T1G164QQ-HCE6 is a 1Gb Q-die DDR2 SDRAM.

Parametrics

K4T1G164QQ-HCE6 absolute maximum ratings: (1)VDD Voltage on VDD pin relative to VSS: - 1.0V to 2.3V; (2)VDDQ Voltage on VDDQ pin relative to VSS: - 0.5V to 2.3V; (3)VDDL Voltage on VDDL pin relative to VSS: - 0.5V to 2.3V; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5V to 2.3V; (5)TSTG Storage Temperature: -55℃ to +100℃.

Features

K4T1G164QQ-HCE6 features: (1)JEDEC standard 1.8V ±0.1V Power Supply; (2)VDDQ = 1.8V ±0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)8 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latency: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination; (14)Special Function Support: PASR(Partial Array Self Refresh), 50ohm ODT, High Temperature Self-Refresh rate enable; (15)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃<TCASE<95℃; (16)All of Lead-free products are compliant for RoHS.

Diagrams

K4T1G164QQ-HCE6 dimension