Product Summary

The K4X51163PI-FGC6 is a 32M×16 Mobile DDR SDRAM.

Parametrics

K4X51163PI-FGC6 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN, VOUT: -0.5 ~ 2.7 V; (2)Voltage on VDD supply relative to VSS, VDD: -0.5 ~ 2.7 V; (3)Voltage on VDDQ supply relative to VSS, VDDQ: -0.5 ~ 2.7 V; (4)Storage temperature, TSTG: -55 ~ +150℃; (5)Power dissipation, PD: 1.0 W; (6)Short circuit current, IOS: 50 mA.

Features

K4X51163PI-FGC6 features: (1)VDD/VDDQ = 1.8V/1.8V; (2)Double-data-rate architecture; two data transfers per clock cycle; (3)Bidirectional data strobe(DQS); (4)Four banks operation; (5)Differential clock inputs(CK and CK); (6)MRS cycle with address key programs; (7)EMRS cycle with address key programs; (8)Internal Temperature Compensated Self Refresh; (9)All inputs except data & DM are sampled at the positive going edge of the system clock(CK); (10)Data I/O transactions on both edges of data strobe, DM for masking; (11)Edge aligned data output, center aligned data input; (12)No DLL; CK to DQS is not synchronized; (13)DM0 - DM3 for write masking only; (14)Auto refresh duty cycle.

Diagrams

K4X51163PI-FGC6 block diagram

K4X56323PG - 7
K4X56323PG - 7

Other


Data Sheet

Negotiable 
K4X56163PE-L(F)G
K4X56163PE-L(F)G

Other


Data Sheet

Negotiable 
K4X51323PC - 7
K4X51323PC - 7

Other


Data Sheet

Negotiable