K9F1G08U0B-PCB0

K9F1G08U0B-PCB0, 1G-bit NAND Flash Memory, 4.6 V, BGA

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Price:: US $3.00~5.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	5.00 / Piece
101 ~ 1000 :	4.00 / Piece
1001 ~ 10000 :	3.00 / Piece

PartNumber:: K9F1G08U0B-PCB0

Brand:: Samsung semiconductor - SAMSUNG | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-09-03

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Part Number:K9F1G08U0B-PCB0
US $3.00 - 5.00
Quantity:

piece

Product Summary

The K9F1G08U0B-PCB0 is a 1G-bit NAND Flash Memory. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200us on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The K9F1G08U0B-PCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.

Parametrics

K9F1G08U0B-PCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 4.6 V; (2)Temperature Under Bias: -10 to +125°C; (3)Storage Temperature: -65 to +150 °C; (4)Short Circuit Current: 5 mA; (5)RIPPLE & NOISE (max.): 150mVp-p; (6)VOLTAGE TOLERANCE: +/-4.0%; (7)LINE REGULATION: +/-1.0%; (8)AC CURRENT: 1.85A / 115VAC or 1A / 230VAC; (9)INRUSH CURRENT (max.): 120A / 230VAC.

Features

K9F1G08U0B-PCB0 features: (1)Command Register Operation; (2)Intelligent Copy-Back; (3)Unique ID for Copyright Protection; (4)Endurance : 100K Program/Erase Cycles; (5)Data Retention : 10 Years; (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection - Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology; (9)Program time : 200us(Typ.); (10)Block Erase Time : 2ms(Typ.); (11)Page Size : (512 + 16)Byte; (12)Random Access : 15us(Max.).