(China (Mainland))
Product Summary
The M29W400DB-70N6 is a 3V supply flash memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400DB-70N6 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Parametrics
M29W400DB-70N6 absolute maximum ratings: (1)Temperature Under Bias: –50 to 125 °C; (2)Storage Temperature: –65 to 150 °C; (3)Input or Output Voltage: –0.6 to VCC +0.6 V; (4)Supply Voltage: –0.6 to 4 V; (5)Identification Voltage: –0.6 to 13.5 V.
Features
M29W400DB-70N6 features: (1)supply voltage Vcc = 2.7V to 3.6V for program, erase; (2)and read; (3)access time: 45, 55, 70ns; (4)programming time: 10us per byte/word typical; (5)11 memory blocks: 1 boot block (top or bottom location), 2 parameter and 8 main blocks; (6)program/erase controller embedded byte/word program; (7)algorithms; (8)erase suspend and resume modes read and program another block during; (9)erase suspend; (10)unlock bypass program command faster production/batch programming; (11)temporary block unprotection mode; (12)low power consumption standby and automatic standby; (13)100,000 program/erase cycles per block; (14)Manufacturer Code: 0020h; (15)Top Device Code M29W400DT: 00EEh; (16)Bottom Device Code M29W400D: 00EFh.
Diagrams
