Product Summary

The M29W400DB-70NB is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. The M29W400DB-70NB is divided into blocks that can be erased independently so it is possible to preserve alid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the M29W400DB-70NB.

Parametrics

M29W400DB-70NB absolute maximum ratigs: (1) Temperature Under Bias TBIAS: -55°C to 125°C; (2) Storage Temperature TSTG: -65°C to +150°C; (3) LInput or Output Voltage VIO: -0.6V, VCC +0.6V; (4) Supply Output Voltage VCC: -0.6V to 4V; (5) Identification Voltage VID: -0.6V to 13.5V.

Features

M29W400DB-70NB features: (1) ACCESS TIME: 45, 55, 70ns; (2) 11 MEMORY BLOCKS; (3) CEmbedded Byte/Word Program algorithms; (4) ERASE SUSPEND and RESUME MODES; (5) UNLOCK BYPASS PROGRAM COMMAND; (6) LOW POWER CONSUMPTION; (7) ELECTRONIC SIGNATURE; (8) CCompliant with Lead-Free Soldering Processes; (9) CLead-Free Version.

Diagrams

M29W400DB-70NB Logic Diagram