M58WR032

M58WR032, 32 Mbit Supply Flash Memory, BGA, -0.2 to 14 V, 100mA, STMicroelectronics

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Price:: US $2.50~3.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 300 :	3.00 / Piece
301 ~ 600 :	2.80 / Piece
601 ~ 1000 :	2.50 / Piece

PartNumber:: M58WR032

Brand:: STMicroelectronics - ST | Pack: BGA | D/C: 11+

Availability:: Supply Ability: 1000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-05-21

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Part Number:M58WR032
US $2.50 - 3.00
Quantity:

piece

Product Summary

The M58WR032 is a 32 Mbit (2Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

Parametrics

M58WR032 absolute maximum ratings: (1)TA, Ambient Operating Temperature: -40 to 85℃; (2)TBIAS Temperature Under Bias: -40 to 125℃; (3)TSTG Storage Temperature: -65 to 155℃; (4)VIO Input or Output Voltage: -0.5 to VDDQ+0.6 V; (5)VDD Supply Voltage: -0.2 to 2.45 V; (6)VDDQ Input/Output Supply Voltage: -0.2 to 3.6 V; (7)VPP Program Voltage: -0.2 to 14 V; (8)IO Output Short Circuit Current: 100 mA; (9)tVPPH Time for VPP at VPPH: 100 hours.

Features

M58WR032 features: (1)SUPPLY VOLTAGE, VDD = 1.65V to 2.2V for Program, Erase; (2)and Read; VDDQ = 1.65V to 3.3V for I/O Buffers; VPP = 12V for fast Program (optional); (3)SYNCHRONOUS / ASYNCHRONOUS READ, Synchronous Burst Read mode: 54MHz; Asynchronous/ Synchronous Page Read; (4)mode; Random Access: 70, 80, 100ns; (5)PROGRAMMING TIME, 8μs by Word typical for Fast Factory; (6)Program; Double/Quadruple Word Program option; Enhanced Factory Program options; (7)MEMORY BLOCKS, Multiple Bank Memory Array: 4 Mbit Banks; Parameter Blocks (Top or Bottom location).