(China (Mainland))
Product Summary
The MT41K1G8THE-125:D is a high-speed, CMOS dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. This device uses Micron 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM). Refer to Micron’s 4Gb DDR3L SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT41K512M8 correlate to TwinDie manufacturing part number MT41K1G8THE-125:D. The device uses a double data rate architecture to achieve high-speed operation.
Parametrics
MT41K1G8THE-125:D absolute maximum ratings: (1)VDD supply voltage relative to VSS: -0.4 to 1.975 V; (2)VDD supply voltage relative to VSSQ: -0.4 to 1.975 V; (3)Voltage on any ball relative to VSS: -0.4 to 1.975 V; (4)Input leakage current: -4 to 4 uA; (5)VREF supply leakage current: -2 to 2 uA; (6)Operating case temperature: 0 to 95 °C; (7)Storage temperature: -55 to 150 °C.
Features
MT41K1G8THE-125:D features: (1)Uses 4Gb Micron die; (2)Two ranks (includes dual CS#, ODT, CKE, and ZQ balls); (3)Each rank has eight internal banks for concurrent operation; (4)VDD = VDDQ = 1.35V (1.283?.45V), backward compatible to VDD = VDDQ = 1.5V+/-075V; (5)1.35V center-terminated push/pull I/O; (6)JEDEC-standard ball-out; (7)Low-profile package; (8)128 Meg x 4 x 8 banks x 2 ranks; (9)78-ball FBGA (10.5mm x 12mm x 1.2mm).
Diagrams
