S29GL512P11TFI010

S29GL512P11TFI010, 3.0 v-only page mode flash memory, 25 ns, 90 nm MirrorBit, TSOP

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Price:: US $0.10~1.00 / piece [Get Latest Price]

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PartNumber:: S29GL512P11TFI010

Brand:: SPANSION - spansion | Pack: TSOP | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-11-13

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Part Number:S29GL512P11TFI010
US $0.10 - 1.00
74AHC2G08VS SOP-8

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MOC3063

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Product Summary

The S29GL512P11TFI010 is a 3.0 v-only page mode flash memory featuring 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. The S29GL512P11TFI010 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard algorithms.The S29GL512P11TFI010 is the 3.0 v-only page mode flash memory featuring 90 nm MirrorBit process technology. It offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. The S29GL512P11TFI010 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard algorithms.

Parametrics

S29GL512P11TFI010 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground: All Inputs and I/Os except as noted below (Note 1), –0.5 V to VCC + 0.5 V; VCC (Note 1), 0.5 V to +4.0 V; VIO, –0.5V to +4.0V; A9 and ACC (Note 2), 0.5 V to +12.5 V; (4)Output Short Circuit Current (Note 3): 200 mA.

Features

S29GL512P11TFI010 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)Enhanced VersatileI/OTM control; (3)90 nm MirrorBit process technology; (4)8-word/16-byte page read buffer; (5)32-word/64-byte write buffer reduces overall programming; (6)time for multiple-word updates; (7)Secured Silicon Sector region; (8)Uniform 64Kword/128KByte Sector Architecture; (9)100,000 erase cycles per sector typical; (10)20-year data retention typical; (11)Offered Packages: 56-pin TSOP, 64-ball Fortified BGA; (12)Suspend and Resume commands for Program and Erase operations; (13)Unlock Bypass Program command to reduce programming; (14)Support for CFI (Common Flash Interface).