(China (Mainland))
Product Summary
The TC58DVM82F1TGIOBBH is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable ead-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses ual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The TC58DVM82F1TGIOBBH has a 528-byte/264-words atic register which allows program and read data to be transferred between the register and the memory cell array 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes +512 bytes: 28 bytes u 32 pages/8k words + 256 words: 264 words x 32 pages).
Parametrics
TC58DVM82F1TGIOBBH absolute maximum ratings: (1)VCC, Power Supply Voltage: -0.6~4.6V; (2)VCCQ, I/O port Power Supply Voltage: -0.6~4.6V; (3)VIN, Input Voltage for Control pins: -0.6~4.6V; (4)VI/O, Input/Output Voltage for I/O pins: -0.6 V~VCCQ +0.3 V (≤ 4.6 V); (5)PD, Power Dissipation: 0.3 W; (6)Tsolder, Soldering Temperature(10s): 260℃; (7)Tstg, Storage Temperature: -55~150℃; (8)Topr, Operating Temperature: 0~70℃.
Features
TC58DVM82F1TGIOBBH features: (1)Modes, Read, Reset, Auto Page Program; Auto Block Erase, Status Read; (2)Mode control, Serial input/output; Command control; (3)Program/Erase Cycles 1E5 cycle (with ECC); (4)Access time, Cell array to register 25 Ps max; Serial Read Cycle 50 ns min ; (5)Operating current, Read (50 ns cycle) 10 mA typ.; Program (avg.) 10 mA typ.; Erase (avg.) 10 mA typ; (6)Standby 50 PA max; (7)Package, TSOP I 48-P-1220-0.50 (Weight:0.53g typ).
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