(China (Mainland))
Product Summary
The TC58NVG0S3ETA00 is a 1 gbit (128m × 8 bits) cmos nand eeprom organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The TC58NVG0S3ETA00 has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG0S3ETA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Parametrics
TC58NVG0S3ETA00 absolute maximum ratings: (1)VCC Power Supply Voltage: －0.6 to 4.6 V; (2)VIN Input Voltage: －0.6 to 4.6 V; (3)VI/O Input /Output Voltage: －0.6 V to VCC + 0.3 V (≤ 4.6 V) V; (4)PD Power Dissipation: 0.3 W; (5)TSOLDER Soldering Temperature (10 s): 260℃; (6)TSTG Storage Temperature: －55 to 150℃; (7)TOPR Operating Temperature: 0 to 70℃.
Features
TC58NVG0S3ETA00 features: (1) Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read; (2) Mode control: Serial input/output, Comm and control; (3) Powersupply VCC = 2.7 V to 3.6 V; (4) Program/Erase Cycles 1E5 Cycles (With ECC); (5) Package TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.).
Diagrams
