Product Summary

The TC58NVG7D2FTA20 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The TC58NVG7D2FTA20 has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

Parametrics

TC58NVG7D2FTA20 absolute maximum ratings: (1)VCC, Power Supply Voltage: -0.6 to 4.6 V; (2)VIN, Input Voltage: -0.6 to 4.6 V; (3)VI/O, Input /Output Voltage: -0.6 to VCC + 0.3 (≤ 4.6 V) V; (4)PD, Power Dissipation: 0.3 W; (5)TSOLDER, Soldering Temperature (10 s): 260℃; (6)TSTG, Storage Temperature: -55 to 150℃; (7)TOPR, Operating Temperature: 0 to 70℃.

Features

TC58NVG7D2FTA20 features: (1) Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read; (2) Mode control: Serial input/output, Command control; (3) Powersupply VCC = 2.7 V to 3.6 V; (4) Program/Erase Cycles 1E5 Cycles (With ECC); (5) Package TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.).

Diagrams

TC58NVG7D2FTA20 block diagram