(China (Mainland))
Product Summary
The JS28F00AM29EWH is an asynchronous, uniform block, parallel NOR Flash memory device manufactured on 65nm multilevel cell (MLC) technology. The JS28F00AM29EWH supports asynchronous random read and page read from all blocks of the array. The JS28F00AM29EWH also features an internal program buffer that improves throughput by program-ming 512 words via one command sequence. The JS28F00AM29EWH contains a 128-word extended memory block which overlaps addresses with array block 0.
Parametrics
JS28F00AM29EWH absolute maximum ratings: (1) Temperature under bias TBIAS: -50 to 125°C; (2) Storage temperature: -65 to 150°C; (3) Input/output voltage: -0.6 to Vcc +0.6V; (4) Supply voltage: -0.6 to 4V; (5) Input/output supply voltage: -0.6 to 4V; (6) Program voltage: -0.6 to 14.5V.
Features
JS28F00AM29EWH features: (1) 2Gb = stacked device (two 1Gb die) ; (2) Asynchronous random/page read; (3) Buffer program: 512-word program buffer; (4) Program/erase controller; (5) BLANK CHECK operation to verify an erased block; (6) Extended memory block; (7) Low power consumption: Standby mode; (8) Green packages available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 JS28F00AM29EWH0 |
|
IC FLASH 1GBIT 110NS 56TSOP |
Data Sheet |
Negotiable |
|
||||||
|
JS28F00AM29EWHA |
|
IC FLASH 1GBIT M29EW 56TSOP |
Data Sheet |
|
|
||||||
