Product Summary

The K4T1G044QF-BCE6 is a 1Gb DDR2 SDRAM. It is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin (DDR2-800) for general applications. The K4T1G044QF-BCE6 operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.

Parametrics

K4T1G044QF-BCE6 absolute maximum ratings: (1)Voltage on VDD pin relative to VSS: - 1.0 V to 2.3 V; (2)Voltage on VDDQ pin relative to VSS: - 0.5 V to 2.3 V; (3)Storage temperature: -55 to +100 °C; (4)Voltage on VDDL pin relative to VSS: - 0.5 V to 2.3 V; (5)Voltage on any pin relative to VSS: - 0.5 V to 2.3 V.

Features

K4T1G044QF-BCE6 features: (1)JEDEC standard VDD = 1.8V+/-0.1V Power Supply; (2)VDDQ = 1.8V+/-0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)8 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination; (14)50ohm ODT; (15)High Temperature Self-Refresh rate enable; (16)All of products are Lead-Free, Halogen-Free, and RoHS compliant.

Diagrams

K4T1G044QF-BCE6 dimension figure