Product Summary
The MT41J256M8HX-15E:D is a DDR3 SDRAM. The MT41J256M8HX-15E:D uses a double data rate architecture to achieve high-speed operation. The double data rate architecture of the MT41J256M8HX-15E:D is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the MT41J256M8HX-15E:D effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
Parametrics
MT41J256M8HX-15E:D absolute maximum ratings: (1)VDD, VDD supply voltage relative to VSS: –0.4 to 1.975 V; (2)VDDQ, VDD supply voltage relative to VSSQ: –0.4 to 1.975 V; (3)VIN, VOUT, Voltage on any pin relative to VSS: –0.4 to 1.975 V; (4)TC, Operating case temperature - Commercial: 0 to 95 ℃; (5)Operating case temperature - Industrial: –40 to 95 ℃; (6)Operating case temperature - Automotive: –40 to 105 ℃; (7)TSTG, Storage temperature: –55 to 150 ℃.
Features
MT41J256M8HX-15E:D features: (1)VDD = VDDQ = 1.5V ±0.075V; (2)1.5V center-terminated push/pull I/O; (3)Differential bidirectional data strobe; (4)8n-bit prefetch architecture; (5)Differential clock inputs (CK, CK#); (6)8 internal banks; (7)Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals; (8)Programmable CAS READ latency (CL); (9)Posted CAS additive latency (AL); (10)Programmable CAS WRITE latency (CWL) based on CK; (11)Fixed burst length (BL) of 8 and burst chop (BC) of 4; (12)Selectable BC4 or BL8 on-the-fly (OTF); (13)Self refresh mode TC of 0 to 95 ℃; (14)Self refresh temperature (SRT); (15)Write leveling; (16)Multipurpose register; (17)Output driver calibration.
Diagrams
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MT41J256M8HX-15E:D |
IC DDR3 SDRAM 2GBIT 78FBGA |
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MT41J256M8HX-15E:D TR |
IC DDR3 SDRAM 2GB 78FBGA |
Data Sheet |
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