Product Summary

The SI4948B is a Dual P-Channel (D-S) 175 MOSFET.

Parametrics

SI4948B absolute maximum ratings: (1)Drain-Source Voltage, VDS: -60V; (2)Gate-Source Voltage, VGS: ±20; (3)Continuous Drain Current (TJ = 150℃), TA = 25℃, ID: -2.4A; TA = 70℃, ID: -2.0A; (4)Pulsed Drain Current (10ms Pulse Width), IDM: -25 A; (5)Continuous Source Current (Diode Conduction), IS: -1.1A; (6)Avalanche Current, L = 0 1 mH, IAS: 15A; (7)Single Pulse Avalanche Energy, EAS: 11 mJ; (8)Maximum Power Dissipationa, TA = 25℃, PD: 1.4W; TA = 70℃: 0.95W; (9)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 175℃.

Features

SI4948B features: (1)VDS (V) = 30V; (2)ID = 7.5A (VGS = 10V); (3)RDS(ON) < 22mΩ (VGS = 10V); (4)RDS(ON) < 35mΩ (VGS = 4.5V).

Diagrams

SI4948B block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si4948BEY
Si4948BEY
Other

Data Sheet
Negotiable 
SI4948BEY-E3
SI4948BEY-E3
Vishay/Siliconix
MOSFET 60V 3.1A 2.4W 120mohm @ 10V
Data Sheet
Negotiable 
SI4948BEY-T1-E3
SI4948BEY-T1-E3
Vishay/Siliconix
MOSFET 60V 3.1A 0.12Ohm
Data Sheet
0-1: $0.86
1-25: $0.68
25-50: $0.65
50-100: $0.59
SI4948BEY-T1-GE3
SI4948BEY-T1-GE3
Vishay/Siliconix
MOSFET 60V 3.1A 2.4W 120mohm @ 10V
Data Sheet
0-1: $0.86
1-10: $0.68
10-50: $0.65
50-100: $0.61